Trinasolar Sets New Solar Cell Efficiency Record at 27.08 Percent

Trinasolar has achieved a significant breakthrough in solar technology, unveiling a record 27.08 percent efficiency for its industrial large-area n-type total passivation (TOPAS) solar cell.

The achievement, verified by the Institute for Solar Energy Research in Hamelin, Germany, marks the highest efficiency recorded for a crystalline silicon solar cell with a front and back contact structure.

This milestone represents the first instance of front-side efficiency surpassing 27 percent, reinforcing Trinasolar’s leadership in solar innovation. The record-setting cell utilises a large-area n-type phosphorus-doped Cz silicon wafer (210×105 mm²) with high minority carrier lifetime. Advanced technologies, including optimised thin-film passivating contact, variable-frequency-RF nanocrystalline p-type emitter, light trapping, and fine line printing, contributed to this breakthrough.

“We are thrilled by this achievement, which reflects our unwavering commitment to advancing solar technology,” said Gao Jifan, Chairman and CEO of Trinasolar. “Our R&D team's relentless efforts continue to enhance the performance and competitiveness of our solar cells and modules," he added.

The new record follows two previous n-type TOPCon efficiency milestones set by Trinasolar in recent months, highlighting continued innovation in both high and low-temperature passivation contacts.